20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF9150 -25a, -100v, 0.150 ohm, p-channel power mosfet this p-channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. ordering information part number IRF9150 package to-204ae brand IRF9150 features ? -25a, -100v ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance symbol note: when ordering, use the entire part number. packaging jedec to-204ae drain (flange) gate source (pin 2) nj semiconductors reserves the right to change test conditions, parameter limits and package dimensions without not.ce. intormatmn turn.shed b> nj semi-conductors is believed to be both accurate and reliable at the time of go in* to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered?? use vi .vnu4 onductors encournges customers to verify that datasheets are current before placing orders.
IRF9150 absolute maximum ratings tc = 25c, unless otherwise specified drain to source breakdown voltage (note 1 ) . . drain to gate voltage (res ~ 20ki) (note 1 ) continuous drain current tc=100c pulsed drain current (note 3) gate to source voltage maximum power dissipation (figure 1) linear derating factor single pulse avalanche energy rating (note 4) .... avalanche current (repetitive or nonrepetitive) . . . operating and storage temperature maximum temperature for soldering leads at 0.063in m.6mml from case for 10s vn<; vnrr in in vpq pn ea<; ti IRF9150 -100 -100 -25 -18 -100 +20 150 1 2 1300 -25 -55 to 1 50 300 units v v a a a v w w/c mj a c c caution: stresses above those listed in "absolute max/mum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied, note: = 25ctotj = 125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage gate threshold voltage zero gate voltage drain current on-state drain current (note 2) gate to source leakage current drain to source on resistance (note 2) forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol bvdss vgs(th) toss to(on) 'gss rds(on) 9fs 'd(on) tr ld(off) tf qg(tot) qgs qgd ciss coss crss ld ls rejc r9ja test conditions id = -250ua, vgs = 0v, (figure 10) vgs = vds. to = -250ua vds = rated bvdss, vgs = = ov vds = 0.8 x rated bvdss, vgs = 0v tc = 1 25c vds > to(on) x rds(on)max> vgs = 10v vgs = 2ov id = -10a, vgs = -10v (figures 8, 9) vds = -10v. to = -12-5 (figure 12) vdd = -5ov. id - -25a, rg ures17, 18)mosfetswitc tially independent of operat = 6.8q, rl = 2.0u, (fig- hing times are essen- ing temperature vgs = -iov, id = -25a, vds = -8 x rated bvdss (figures 14, 19, 20) gate charge is essentially indpendent of operating temperature vds = -25v- vgs = ov, f = (figure 11) measured between the contact screw on the flange that is closer to source and gate pins and the center of die measured from the source lead, 6mm (0.25in) from the flange and the source bonding pad mhz modified mosfet symbol showing the internal devices inductances free air operation min -100 -2 - - -25 - - 4 - - - - - - - - - - - - typ - - - - - - 0.09 10 16 110 65 46 82 14 42 2400 850 400 5.0 13 - - max - -4 -25 -250 - 100 0.150 - 24 160 100 70 120 - - - - - 0.83 30 units v v ua ha a na n s ns ns ns ns nc nc nc pf pf pf nh nh c/w c/w
IRF9150 source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage(note 2) reverse recovery time reverse recovery charge symbol !sd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode /ik g o u 1 i i > d fe s tc = 25c, isd = 25a, vgs = 0v (figure 13) tj = 25c, isd = 25a, dlsd/dt = 100a/us tj = 25c, isd = 25a, dlsd/dt = 100a/ns min - - - 0.3 typ - 0.9 150 0.7 max -25 -100 1.5 300 1.5 units a a v ns nc notes: 2. pulse test: pulse width < 300u,s, duty cycle < 2%. 3. repetitive rating: pulse width limited by maximum junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 25v, starting tj = 25c, l = 3.2mh, rg = 25o, peak ias = 25a see figures 15, 16. typical performance curves unless otherwise specified i./ t 111 4 ? power dissipation multipli _i _i _t o - -* w cs ^1 bo c \^ x^ x^ \ 36 61 86 211 236 261 l%-!dbtf!ufnqfsbuvsf!)pd' glhvsf 21 opsnbm{ fe qpx fs ejttxbupow dbtf ufnqfsbuvsf -30 -25 -20 .26 .21 36 61 86 211 236 ud-!dbtf!ufnqfsbuvsf!)pd* 261 ghvsf3/ nbyjmvn dpoodvpvt esbjodvssfouwt dbtfiufnqfsbuvsf evuz!cbdlps;!e!>!lll6 cfbl!uk!>!c!en!y
